A Clean Breakthrough: Directly Patterning 2D Materials for Wafer-Scale Electronics
In the fast-evolving field of nanoelectronics, researchers at Nanyang Technological University have introduced a game-changing technique that could finally make wafer-scale fabrication of 2D semiconductors both scalable and residue-free. As published in Nature Electronics , their novel metal-stamp imprinting method enables direct patterning of delicate 2D materials—such as MoS₂—without the chemical residues and structural damage often introduced by traditional etching or masking techniques. The Challenge of Patterning 2D Materials Two-dimensional semiconductors like molybdenum disulfide (MoS₂) are ultra-thin crystalline materials with promising applications in future electronics, especially as silicon nears its physical scaling limits. However, realizing the full potential of these atomically thin layers has been hindered by a lack of scalable, clean patterning techniques. Traditional patterning strategies, such as reactive ion etching (RIE) or polymer-based lithogra...