Wafer-Scale Breakthrough: 2D InSe Semiconductors Set New Record for Next-Gen Electronics

Wafer-scale InSe breakthrough

In a stunning advance that could redefine the future of computing, researchers at the International Center for Quantum Materials at Peking University and Renmin University of China have developed high-performance wafer-scale two-dimensional indium selenide (InSe) semiconductors. Published in the journal Science, this innovation marks a major leap toward post-silicon electronics, boasting record-breaking electron mobility and ultra-efficient transistor performance.

InSe: A Golden Opportunity

Nicknamed the "golden semiconductor", indium selenide (InSe) offers a tantalizing mix of low effective mass, high thermal velocity, and a direct bandgap—ideal for next-generation logic devices. However, previous efforts to scale InSe films to wafer-level dimensions were hampered by unstable phase formations and imprecise atomic ratios during synthesis. Until now, most results yielded only microscopic flakes.

Solid–Liquid–Solid Innovation

To overcome this, Professor Liu Kaihui’s team introduced a novel solid–liquid–solid conversion strategy. Starting with an amorphous InSe film sputtered onto sapphire wafers, the substrate is sealed in a cavity with low-melting-point indium. Heating to around 550°C triggers a highly localized recrystallization, forming pristine, stoichiometrically perfect crystalline InSe films.

This method produced 2-inch wafers of InSe with world-first metrics in phase purity, crystallinity, and thickness uniformity, offering a breakthrough platform for scalable semiconductor applications.

Record-Setting Device Performance

The InSe-based transistor arrays manufactured from these wafers achieved extraordinary metrics. Key figures include:

  • Electron mobility: up to 287 cm²/V·s
  • Subthreshold swing: 67 mV/dec on average
  • Low DIBL: excellent short-channel control at sub-10 nm gate lengths
  • Energy efficiency: surpassing 2037 IRDS targets for delay and energy-delay product (EDP)

These devices not only outperform all previous 2D semiconductor records but also demonstrate the feasibility of replacing silicon in high-density integrated circuits.

Applications in AI, Smart Devices, and Beyond

The implications are enormous. The InSe wafers are expected to catalyze advancements in artificial intelligence hardware, neuromorphic computing, edge sensors, quantum chips, and autonomous systems. Their scalability and performance position them as ideal candidates for the next wave of ultra-fast, low-power electronics.

A New Dawn for 2D Materials

As Moore’s Law slows, and as silicon approaches its physical limits, wafer-scale 2D materials like InSe are emerging as the next frontier. This breakthrough doesn't just advance 2D semiconductor science—it redefines it. By overcoming synthesis challenges with a creative solid–liquid–solid approach, the team has delivered a roadmap for industrial-scale, high-quality 2D semiconductors.

🔗 Read the full article on TechXplore:
https://techxplore.com/news/2025-07-wafer-scale-2d-inse-semiconductors.html

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#2DMaterials #InSeSemiconductors #WaferScale #PostSiliconElectronics #NextGenChips #QuantumMaterials #SolidLiquidSolid #TechInnovation #AIHardware #PWmat #QuantumServerNetworks

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