Scientists Smash Record in Stacking Semiconductor Transistors for Next-Generation Large-Area Electronics
Researchers at King Abdullah University of Science and Technology (KAUST) have achieved a historic milestone in semiconductor innovation by developing the world’s first six-stack hybrid CMOS (complementary metal-oxide semiconductor) architecture for large-area electronics. The record-breaking design, published in Nature Electronics, surpasses all previously reported CMOS stack heights — none of which exceeded two layers — and marks a major leap forward for microchip integration density, flexibility, and energy efficiency.
Breaking Beyond the Limits of Traditional Chip Design
Conventional semiconductor design has long relied on a single-layer or planar transistor configuration, where components are laid out horizontally on a wafer surface. As device miniaturization progresses toward the quantum mechanical limits of silicon scaling, engineers are encountering unprecedented challenges — from heat dissipation and leakage currents to astronomical fabrication costs. Vertical stacking, also known as 3D integration, offers a path to extend Moore’s Law without shrinking transistor sizes further, by stacking multiple layers of transistors in the same footprint.
Led by Associate Professor Xiaohang Li of the KAUST Advanced Semiconductor Laboratory, the team’s new hybrid CMOS design showcases how a vertically integrated chip can drastically increase functional density and reduce footprint — without requiring extreme manufacturing conditions. Remarkably, no fabrication step in this record-breaking process exceeded 150°C, meaning the stacked layers can be assembled safely without damaging the delicate lower layers, a key challenge in previous attempts at vertical integration.
A Six-Layer CMOS: Blueprint for the Future
The six-stack hybrid CMOS developed by KAUST integrates multiple complementary transistors (n-type and p-type) on top of one another while maintaining precise electrical isolation and alignment across all layers. The researchers achieved this through refined low-temperature processing, surface smoothing, and meticulous alignment optimization, yielding smoother interfaces and improved charge transport between stacked transistors.
As postdoctoral researcher Saravanan Yuvaraja explained, “In microchip design, it is all about packing more power in less space. By refining multiple steps in fabrication, we provide a blueprint for scaling vertically and increasing functional density far beyond today’s limits.” The breakthrough showcases how the hybrid CMOS concept — traditionally applied in large-area flexible electronics — can now bridge toward more compact and powerful systems.
Applications Across Emerging Technologies
Large-area hybrid CMOS architectures could play a transformative role in the next generation of technologies — from flexible wearable devices and biomedical sensors to advanced Internet of Things (IoT) platforms and smart manufacturing systems. Unlike conventional silicon chips, hybrid CMOS devices can be fabricated on flexible substrates and used in environments that demand mechanical durability and adaptability. The achievement also aligns with ongoing global efforts to develop cost-effective alternatives to high-end silicon foundries, enabling decentralized electronics production and broader innovation accessibility.
By demonstrating that multi-layer transistor stacking can be achieved at low temperatures without performance loss, the KAUST team has opened the door to next-generation chip design paradigms. Their approach could eventually integrate photonic, electronic, and sensor components into single vertically stacked systems, improving performance and reducing latency for applications such as AI accelerators, neuromorphic computing, and flexible optoelectronics.
Engineering at the Edge of the Possible
This record-setting research emphasizes a global shift in semiconductor philosophy: moving from “miniaturization” to “densification.” Instead of continually reducing transistor sizes, scientists are now focusing on three-dimensional integration as the new frontier for electronics. Similar stacking principles are already applied in advanced memory technologies like 3D NAND flash, and KAUST’s work extends this principle to logic circuits, potentially ushering in a new era of 3D logic CMOS systems.
Reference: “Three-Dimensional Integrated Hybrid Complementary Circuits for Large-Area Electronics,” Nature Electronics (2025). DOI: 10.1038/s41928-025-01469-0 Original article: TechXplore – Scientists smash record in stacking semiconductor transistors for large-area electronics.
This article on Quantum Server Networks was prepared with the assistance of AI technologies to enhance clarity, readability, and context for science communication in advanced semiconductor research.
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