Pushing the Limits: Thermal Tracking in Ultrawide Bandgap Semiconductors
As electronics grow faster and smaller, one challenge becomes hotter than ever—managing heat. A recent article on TechXplore highlights the groundbreaking work from researchers at the University of Connecticut (UConn) and the U.S. Naval Research Laboratory who are developing new strategies to monitor heat flow in next-generation semiconductor devices. Their insights, published in Applied Physics Letters and selected as an Editor’s Pick, represent a leap toward safer, more efficient, and more powerful electronics powered by ultrawide bandgap (UWBG) materials.

Why Ultrawide Bandgap Semiconductors Matter
Today’s electronics mostly rely on silicon (Si), but as demand for faster processing and higher energy efficiency grows, the industry is shifting toward UWBG materials like gallium oxide (Ga₂O₃), aluminum gallium nitride (AlGaN), and even diamond. These materials offer higher voltage resistance (up to 8,000V) and can function at temperatures above 200°C—ideal for high-power, RF, and aerospace applications.
However, these materials come with challenges: they are expensive, difficult to produce, and—critically—their internal thermal behavior is tough to measure. Uncontrolled hotspots in these devices can lead to localized failures, with heat flux levels exceeding those on the surface of the sun.
The Metrology Breakthrough
To tackle this, UConn’s team, led by Professor Georges Pavlidis and Ph.D. students Dominic Myren and Francis Vásquez, is pioneering new heat mapping techniques. These include:
- Thermoreflectance Imaging – Measuring how light reflects off heated surfaces.
- Raman Spectroscopy – Using light scattering to detect temperature-dependent shifts in crystal vibrations.
- Scanning Thermal Microscopy – Physically "touching" the chip surface to sense heat.
- UV Thermal Microscopy – A novel approach leveraging deep ultraviolet light to resolve nanoscale heat gradients.
The idea is to provide industry with real-time, localized thermal insights—critical to preventing device failure and unlocking the full potential of UWBG semiconductors. According to the team, these tools will lay the foundation for smarter thermal management and faster commercial adoption of next-gen electronics.
Wider Impact: From 5G to Quantum
The research goes beyond just power electronics. By pushing the resolution limits of thermal measurements, these methods could be extended to quantum computing, photonics, and phase-change memory devices. Pavlidis’ team has already collaborated with the University of Maryland to apply thermal engineering concepts in photonic circuits, as reported in Nature Communications.
Backed by the Microelectronics Commons program and the Northeast Microelectronics Coalition Hub, this research demonstrates how academia, defense, and industry can converge to shape the future of sustainable, high-performance electronics.
Conclusion
Advanced thermal metrology is quickly becoming a cornerstone of electronics research. With UWBG materials redefining what's possible in chip design, new methods for understanding heat distribution are crucial. The work led by UConn not only provides a scientific roadmap—it inspires the kind of cross-disciplinary collaboration essential for building the next generation of devices.
Read the full article on TechXplore: https://techxplore.com/news/2025-06-outline-ways-track-advanced-semiconductors.html
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